Photo and electroluminescence of porous silicon layers
نویسندگان
چکیده
منابع مشابه
Control capability of electrolytic concentration on refractive index and dielectric constant of porous Silicon layers
Porous Silicon (PS) samples have been prepared by electrochemical anodization of p-type silicon wafer by varying HF concentrations in the electrolytic solution. The structural, surface morphological, optical and surface composition analysis of the prepared samples were done by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Photoluminescence (PL) and Fourier transform infr...
متن کاملControl capability of electrolytic concentration on refractive index and dielectric constant of porous Silicon layers
Porous Silicon (PS) samples have been prepared by electrochemical anodization of p-type silicon wafer by varying HF concentrations in the electrolytic solution. The structural, surface morphological, optical and surface composition analysis of the prepared samples were done by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Photoluminescence (PL) and Fourier transform infr...
متن کاملInfrared photo-induced absorption spectroscopy of porous silicon
The quantum confinement model, which assigns some of the luminescence features in porous silicon to size quantization in Si nano-crystallites, also predicts quantization of both the conduction and valence bands into sub-levels. In order to resolve this effect we have used a new experimental technique called “photo-induced infrared absorption spectroscopy”. Here, a pump, visible laser, optically...
متن کاملStrong Blue and Violet Photo- and Electroluminescence from Ge- and Si-Implanted Silicon Dioxide
The photoluminescence (PL) and electroluminescence (EL) properties of Ge-implanted SiO2 films thermally-grown on a Si substrate have been investigated and compared to those of Si-implanted SiO2 films. It is found that the blue-violet PL from both Si and Ge-rich layers reaches a maximum after annealing at 500 C for 30 min. The PL and EL from Ge-implanted SiO2 are distinctly higher than that from...
متن کاملcontrol capability of electrolytic concentration on refractive index and dielectric constant of porous silicon layers
porous silicon (ps) samples have been prepared by electrochemical anodization of p-type silicon wafer by varying hf concentrations in the electrolytic solution. the structural, surface morphological, optical and surface composition analysis of the prepared samples were done by x-ray diffraction (xrd), scanning electron microscopy (sem), photoluminescence (pl) and fourier transform infrared (fti...
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ژورنال
عنوان ژورنال: BIBECHANA
سال: 2012
ISSN: 2382-5340,2091-0762
DOI: 10.3126/bibechana.v8i0.4897